BSC027N03S G

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Overview of BSC027N03S G

Part NumberBSC027N03S G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 25A/100A TDSON
DatasheetsDownload BSC027N03S G Datasheet PDFPDF Icon
Price for BSC027N03S G

Specification of BSC027N03S G

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 90A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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